Minisymposium Presentation

As transistor dimensions have progressively shrunk over the years, X-ray microscopy resolution has also continued to improve to meet the demands of the semiconductor industry. Although electron microscopy can achieve higher imaging resolutions, X-rays offer unique advantages, including non-destructive 3D imaging of fully intact integrated circuit (IC) dies and imaging under operando conditions. In this presentation, I will introduce ongoing innovations of synchrotron-based X-ray microscopy, with a focus on a technique called ptychographic X-ray computed tomography. Our recent work addresses nanometer-scale experimental instabilities and depth-of-field limitations, enabling an unprecedented 4-nanometer resolution achieved during integrated circuit imaging. With the upcoming SLS upgrade, X-ray microscopy performance is expected to dramatically improve. This presentation will discuss the implications of these advancements and the potential of X-ray microscopy for nanoscale metrology of integrated circuits.